Technical Specifications of JAN2N4957
| Datasheet |  JAN2N4957 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Microsemi IRE Division |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Voltage - Collector Emitter Breakdown (Max) | 30V |
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| Frequency - Transition | - |
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| Noise Figure (dB Typ @ f) | 3.5dB @ 450MHz |
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| Gain | 25dB |
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| Power - Max | 200mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
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| Current - Collector (Ic) (Max) | 30mA |
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| Mounting Type | Through Hole |
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| Package / Case | TO-72-3 Metal Can |
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| Supplier Device Package | TO-72 |
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