Technical Specifications of IXTH1N200P3HV
| Datasheet |  IXTH1N200P3HV datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | IXYS |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 2000V (2kV) |
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| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
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| Rds On (Max) @ Id, Vgs | 40 Ohm @ 500mA, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 23.5nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 646pF @ 25V |
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| Power - Max | 125W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-247-3 |
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| Supplier Device Package | TO-247HV |
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We can supply IXYS part# IXTH1N200P3HV. Use the request quote form to request IXTH1N200P3HV pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTH1N200P3HV. The price and lead time for IXTH1N200P3HV depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# IXTH1N200P3HV. We look forward to doing business with you.
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