Technical Specifications of APT35GP120JDQ2
| Datasheet |  APT35GP120JDQ2 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Modules |
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| Manufacturer | Microsemi Corporation |
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| Series | POWER MOS 7? |
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| IGBT Type | PT |
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| Configuration | Single |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 64A |
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| Power - Max | 284W |
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| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 35A |
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| Current - Collector Cutoff (Max) | 350μA |
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| Input Capacitance (Cies) @ Vce | 3.24nF @ 25V |
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| Input | Standard |
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| NTC Thermistor | No |
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| Mounting Type | Chassis Mount |
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| Package / Case | ISOTOP |
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| Supplier Device Package | ISOTOP? |
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