Technical Specifications of SSM6J212FE,LF
| Datasheet |  SSM6J212FE,LF datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 1.5V Drive |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
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| Rds On (Max) @ Id, Vgs | 40.7 mOhm @ 3A, 4.5V |
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| Vgs(th) (Max) @ Id | 1V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 14.1nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 970pF @ 10V |
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| Power - Max | 500mW |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-563, SOT-666 |
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| Supplier Device Package | ES6 |
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