Technical Specifications of IXFN30N110P
| Datasheet |  IXFN30N110P datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | IXYS |
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| Series | Polar? |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 1100V (1.1kV) |
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| Current - Continuous Drain (Id) @ 25°C | 25A |
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| Rds On (Max) @ Id, Vgs | 360 mOhm @ 15A, 10V |
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| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 235nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 13600pF @ 25V |
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| Power - Max | 695W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Chassis Mount |
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| Package / Case | SOT-227-4, miniBLOC |
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| Supplier Device Package | SOT-227B |
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