Technical Specifications of MS652S
| Datasheet |  MS652S datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 16V |
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| Frequency - Transition | 450MHz ~ 512MHz |
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| Noise Figure (dB Typ @ f) | - |
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| Gain | 10dB |
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| Power - Max | 25W |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 200mA, 5V |
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| Current - Collector (Ic) (Max) | 2A |
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| Mounting Type | Chassis Mount |
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| Package / Case | M123 |
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| Supplier Device Package | M123 |
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