Technical Specifications of ZVP2110ASTZ
| Datasheet |  ZVP2110ASTZ datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Diodes Incorporated |
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| Series | - |
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| Packaging | Tape & Box (TB) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 100V |
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| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 8 Ohm @ 375mA, 10V |
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| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 100pF @ 25V |
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| Power - Max | 700mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | E-Line-3 |
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| Supplier Device Package | E-Line (TO-92 compatible) |
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