Technical Specifications of PMDT290UNE,115
| Datasheet |  PMDT290UNE,115 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | NXP Semiconductors |
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| Series | Automotive, AEC-Q101, TrenchMOS? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | 2 N-Channel (Dual) |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 800mA |
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| Rds On (Max) @ Id, Vgs | 380 mOhm @ 500mA, 4.5V |
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| Vgs(th) (Max) @ Id | 950mV @ 250μA |
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| Gate Charge (Qg) @ Vgs | 0.68nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 83pF @ 10V |
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| Power - Max | 500mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-563, SOT-666 |
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| Supplier Device Package | SOT-666 |
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