Technical Specifications of GA10JT12-263
| Datasheet |  GA10JT12-263 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | GeneSiC Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| FET Type | Junction Transistor, Normally Off |
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| FET Feature | Silicon Carbide (SiC) |
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| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
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| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
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| Rds On (Max) @ Id, Vgs | 120 mOhm @ 10A |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 1403pF @ 800V |
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| Power - Max | 170W |
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| Operating Temperature | 175°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | - |
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| Supplier Device Package | - |
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