Technical Specifications of MS1007
| Datasheet |  MS1007 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 55V |
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| Frequency - Transition | 30MHz |
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| Noise Figure (dB Typ @ f) | - |
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| Gain | 14dB |
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| Power - Max | 233W |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 1.4A, 6V |
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| Current - Collector (Ic) (Max) | 10A |
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| Mounting Type | Chassis Mount |
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| Package / Case | M174 |
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| Supplier Device Package | M174 |
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