Technical Specifications of MDS60L
Datasheet | MDS60L datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - RF |
Manufacturer | Microsemi Corporation |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Frequency - Transition | 1.03GHz ~ 1.09GHz |
Noise Figure (dB Typ @ f) | - |
Gain | 10dB |
Power - Max | 120W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
Current - Collector (Ic) (Max) | 4A |
Mounting Type | Chassis Mount |
Package / Case | 55AW |
Supplier Device Package | 55AW |
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