Technical Specifications of BUL642D2G
| Datasheet |  BUL642D2G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 440V |
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| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 200mA, 2A |
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| Current - Collector Cutoff (Max) | 200μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 16 @ 500mA, 1V |
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| Power - Max | 75W |
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| Frequency - Transition | 13MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220AB |
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