Technical Specifications of 2N7636-GA
Datasheet | 2N7636-GA datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Packaging | Tube |
FET Type | Junction Transistor, Normally Off |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
Rds On (Max) @ Id, Vgs | 415 mOhm @ 4A |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 324pF @ 35V |
Power - Max | 125W |
Operating Temperature | -55°C ~ 225°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-276AA |
Supplier Device Package | TO-276 |
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