Technical Specifications of APTM10UM02FAG
Datasheet | APTM10UM02FAG datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Microsemi Corporation |
Series | - |
Packaging | Bulk |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 570A |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id | 4V @ 10mA |
Gate Charge (Qg) @ Vgs | 1360nC @ 10V |
Input Capacitance (Ciss) @ Vds | 40000pF @ 25V |
Power - Max | 1660W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP6 |
Supplier Device Package | SP6 |
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