Technical Specifications of 2N5551ZL1
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Box (TB) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 600mA |
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| Voltage - Collector Emitter Breakdown (Max) | 160V |
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| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 50nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
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| Power - Max | 625mW |
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| Frequency - Transition | 300MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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| Supplier Device Package | TO-92-3 |
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We can supply ON Semiconductor part# 2N5551ZL1. Use the request quote form to request 2N5551ZL1 pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2N5551ZL1. The price and lead time for 2N5551ZL1 depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# 2N5551ZL1. We look forward to doing business with you.
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