Technical Specifications of MDS1100
| Datasheet |  MDS1100 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 65V |
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| Frequency - Transition | 1.03GHz |
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| Noise Figure (dB Typ @ f) | - |
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| Gain | 8.9dB |
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| Power - Max | 8750W |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
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| Current - Collector (Ic) (Max) | 100A |
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| Mounting Type | Surface Mount |
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| Package / Case | 55TU-1 |
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| Supplier Device Package | 55TU-1 |
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