Technical Specifications of HTNFET-D
| Datasheet |  HTNFET-D datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Honeywell Microelectronics & Precision Sensors |
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| Series | HTMOS? |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 55V |
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| Current - Continuous Drain (Id) @ 25°C | - |
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| Rds On (Max) @ Id, Vgs | 400 mOhm @ 100mA, 5V |
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| Vgs(th) (Max) @ Id | 2.4V @ 100μA |
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| Gate Charge (Qg) @ Vgs | 4.3nC @ 5V |
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| Input Capacitance (Ciss) @ Vds | 290pF @ 28V |
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| Power - Max | 50W |
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| Operating Temperature | -55°C ~ 225°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | 8-CDIP Exposed Pad |
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| Supplier Device Package | 8-CDIP-EP |
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