Technical Specifications of GA50JT06-258
Datasheet | GA50JT06-258 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Packaging | Bulk |
FET Type | Junction Transistor, Normally Off |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 50A |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 769W |
Operating Temperature | -55°C ~ 225°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-258-3, TO-258AA |
Supplier Device Package | TO-258 |
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