Technical Specifications of GAP05SLT80-220
Datasheet | GAP05SLT80-220 datasheet |
Category | Discrete Semiconductor Products |
Family | Diodes - Rectifiers - Single |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Packaging | Tube |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 8000V (8kV) |
Current - Average Rectified (Io) | 50mA (DC) |
Voltage - Forward (Vf) (Max) @ If | 4.6V @ 50mA |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 3.8μA @ 8000V |
Capacitance @ Vr, F | 25pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | Axial |
Supplier Device Package | - |
Operating Temperature - Junction | -55°C ~ 175°C |
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