Technical Specifications of PHE13009/DG,127
Datasheet | PHE13009/DG,127 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single |
Manufacturer | NXP Semiconductors |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 12A |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 1.6A, 8A |
Current - Collector Cutoff (Max) | 100μA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
Power - Max | 80W |
Frequency - Transition | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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