Technical Specifications of BSP52H6327XTSA1
| Datasheet |  BSP52H6327XTSA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN - Darlington |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 80V |
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| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
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| Current - Collector Cutoff (Max) | 10μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
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| Power - Max | 1.5W |
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| Frequency - Transition | 200MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-261-4, TO-261AA |
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| Supplier Device Package | PG-SOT223-4 |
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