Technical Specifications of MX0912B351Y,114
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Ampleon USA Inc. |
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| Series | - |
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| Packaging | Tray |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 20V |
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| Frequency - Transition | 1.215GHz |
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| Noise Figure (dB Typ @ f) | - |
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| Gain | 7.6dB |
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| Power - Max | 960W |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
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| Current - Collector (Ic) (Max) | 21A |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-439A |
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| Supplier Device Package | CDFM2 |
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