Start With
Include WithHome > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTC115EMB,315
PDTC115EMB,315
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | PDTC115EMB,315 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Description | TRANS PREBIAS NPN 250MW 3DFN |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| PDTC115EMB,315 Price |  |
Technical Specifications of PDTC115EMB,315
| Category | Discrete Semiconductor Products |
|---|---|
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer | NXP Semiconductors |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 100k |
| Resistor - Emitter Base (R2) (Ohms) | 100k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250μA, 5mA |
| Current - Collector Cutoff (Max) | 1μA |
| Frequency - Transition | 230MHz |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | 3-DFN1006B (0.6x1) |
