Technical Specifications of TK7S10N1Z,LQ
Datasheet | TK7S10N1Z,LQ datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
Rds On (Max) @ Id, Vgs | 48 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100μA |
Gate Charge (Qg) @ Vgs | 7.1nC @ 10V |
Input Capacitance (Ciss) @ Vds | 470pF @ 10V |
Power - Max | 50W |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK+ |
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