Technical Specifications of 2N6491G
| Datasheet |  2N6491G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 15A |
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| Voltage - Collector Emitter Breakdown (Max) | 80V |
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| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 5A, 15A |
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| Current - Collector Cutoff (Max) | 1mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 4V |
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| Power - Max | 1.8W |
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| Frequency - Transition | 5MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220AB |
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