Technical Specifications of UPA2816T1S-E2-AT
| Datasheet |  UPA2816T1S-E2-AT datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 4.5V Drive |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
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| Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 17A, 10V |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | 33.4nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 1160pF @ 10V |
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| Power - Max | 1.5W |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerWDFN |
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| Supplier Device Package | 8-HWSON (3.3x3.3) |
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