Technical Specifications of 2SD1862TV2Q
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Box (TB) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 2A |
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| Voltage - Collector Emitter Breakdown (Max) | 32V |
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| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
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| Power - Max | 1W |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Through Hole |
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| Package / Case | 3-SIP |
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| Supplier Device Package | ATV |
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