Technical Specifications of EMZ8T2R
| Datasheet |  EMZ8T2R datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN, PNP |
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| Current - Collector (Ic) (Max) | 150mA, 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
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| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V / 270 @ 10mA, 2V |
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| Power - Max | 150mW |
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| Frequency - Transition | 180MHz, 260MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-563, SOT-666 |
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| Supplier Device Package | EMT6 |
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