Technical Specifications of MPSH10G
| Datasheet |  MPSH10G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 25V |
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| Frequency - Transition | 650MHz |
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| Noise Figure (dB Typ @ f) | - |
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| Gain | - |
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| Power - Max | 350mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
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| Current - Collector (Ic) (Max) | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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| Supplier Device Package | TO-92-3 |
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