Technical Specifications of BYG10MHE3/TR
| Datasheet |  BYG10MHE3/TR datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | Vishay Semiconductor Diodes Division |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Diode Type | Avalanche |
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| Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
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| Current - Average Rectified (Io) | 1.5A |
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| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 1.5A |
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| Speed | Standard Recovery >500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | 4μs |
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| Current - Reverse Leakage @ Vr | 1μA @ 1000V |
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| Capacitance @ Vr, F | - |
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| Mounting Type | Surface Mount |
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| Package / Case | DO-214AC, SMA |
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| Supplier Device Package | DO-214AC (SMA) |
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| Operating Temperature - Junction | -55°C ~ 150°C |
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