Technical Specifications of NESG2107M33-T3-A
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | CEL |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 5V |
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| Frequency - Transition | 10GHz |
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| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.5dB @ 2GHz |
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| Gain | 7dB ~ 10dB |
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| Power - Max | 130mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 5mA, 1V |
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| Current - Collector (Ic) (Max) | 100mA |
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| Mounting Type | Surface Mount |
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| Package / Case | 3-SMD, Flat Leads |
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| Supplier Device Package | 3-SuperMiniMold (M33) |
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