Technical Specifications of 2SD1012G-SPA
| Datasheet |  2SD1012G-SPA datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 700mA |
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| Voltage - Collector Emitter Breakdown (Max) | 15V |
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| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 50mA, 2V |
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| Power - Max | 250mW |
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| Frequency - Transition | 250MHz |
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| Mounting Type | Through Hole |
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| Package / Case | 3-SIP |
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| Supplier Device Package | 3-SPA |
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