Technical Specifications of APT65GP60L2DQ2G
| Datasheet |  APT65GP60L2DQ2G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | POWER MOS 7? |
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| Packaging | Tube |
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| IGBT Type | PT |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 198A |
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| Current - Collector Pulsed (Icm) | 250A |
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| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
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| Power - Max | 833W |
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| Switching Energy | 605μJ (on), 895μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 210nC |
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| Td (on/off) @ 25°C | 30ns/90ns |
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| Test Condition | 400V, 65A, 5 Ohm, 15V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-264-3, TO-264AA |
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| Mounting Type | Through Hole |
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| Supplier Device Package | * |
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