Start With
Include WithHome > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2709JE(TE85L,F)
RN2709JE(TE85L,F)
.jpg)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | RN2709JE(TE85L,F) |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS 2PNP PREBIAS 0.1W ESV |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| RN2709JE(TE85L,F) Price |  |
Technical Specifications of RN2709JE(TE85L,F)
| Datasheet |  RN2709JE(TE85L,F) datasheet |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 47k |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |
