Technical Specifications of CSD85312Q3E
| Datasheet |  CSD85312Q3E datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Texas Instruments |
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| Series | NexFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | 2 N-Channel (Dual) Common Source |
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| FET Feature | Logic Level Gate, 5V Drive |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 39A |
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| Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 10A, 8V |
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| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 15.2nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 2390pF @ 10V |
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| Power - Max | 2.5W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerVDFN |
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| Supplier Device Package | 8-VSON (3.3x3.3) |
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