Technical Specifications of APTGT200DH60G
| Datasheet |  APTGT200DH60G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Modules |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| IGBT Type | Trench Field Stop |
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| Configuration | Asymmetrical Bridge |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 290A |
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| Power - Max | 625W |
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| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A |
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| Current - Collector Cutoff (Max) | 250μA |
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| Input Capacitance (Cies) @ Vce | 12.3nF @ 25V |
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| Input | Standard |
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| NTC Thermistor | No |
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| Mounting Type | Chassis Mount |
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| Package / Case | SP6 |
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| Supplier Device Package | SP6 |
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