Technical Specifications of 2SD2016
| Datasheet |  2SD2016 datasheet |
|---|
| Category | Discrete Semiconductor Products |
|---|
| Family | Transistors - Bipolar (BJT) - Single |
|---|
| Manufacturer | Sanken |
|---|
| Series | - |
|---|
| Packaging | Bulk |
|---|
| Transistor Type | NPN - Darlington |
|---|
| Current - Collector (Ic) (Max) | 3A |
|---|
| Voltage - Collector Emitter Breakdown (Max) | 200V |
|---|
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1A |
|---|
| Current - Collector Cutoff (Max) | 10μA (ICBO) |
|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V |
|---|
| Power - Max | 25W |
|---|
| Frequency - Transition | 90MHz |
|---|
| Mounting Type | Through Hole |
|---|
| Package / Case | TO-220-3 Full Pack |
|---|
| Supplier Device Package | TO-220F |
|---|
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