Technical Specifications of MII200-12A4
| Datasheet |  MII200-12A4 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Modules |
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| Manufacturer | IXYS |
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| Series | - |
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| IGBT Type | NPT |
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| Configuration | Half Bridge |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 270A |
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| Power - Max | 1130W |
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| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 150A |
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| Current - Collector Cutoff (Max) | 10mA |
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| Input Capacitance (Cies) @ Vce | 11nF @ 25V |
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| Input | Standard |
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| NTC Thermistor | No |
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| Mounting Type | Chassis Mount |
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| Package / Case | Y3-DCB |
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| Supplier Device Package | Y3-DCB |
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