Technical Specifications of MRF5812GR2
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - RF |
Manufacturer | Microsemi Corporation |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Frequency - Transition | 5GHz |
Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 500MHz |
Gain | 13dB ~ 15.5dB |
Power - Max | 1.25W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 200mA |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
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