Technical Specifications of 2SA1669-TB-E
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | SANYO Semiconductor (U.S.A) Corporation |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | PNP |
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| Voltage - Collector Emitter Breakdown (Max) | 15V |
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| Frequency - Transition | 3GHz |
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| Noise Figure (dB Typ @ f) | 2dB @ 900MHz |
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| Gain | 5dB |
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| Power - Max | 250mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
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| Current - Collector (Ic) (Max) | 50mA |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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| Supplier Device Package | 3-CP |
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