Technical Specifications of NE58219-T1-A
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | CEL |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 12V |
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| Frequency - Transition | 5GHz |
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| Noise Figure (dB Typ @ f) | - |
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| Gain | - |
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| Power - Max | 100mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
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| Current - Collector (Ic) (Max) | 60mA |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-75, SOT-416 |
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| Supplier Device Package | 3-SuperMiniMold (19) |
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