Technical Specifications of NESG2030M04-T2-A
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | CEL |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 2.3V |
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| Frequency - Transition | 60GHz |
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| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.1dB @ 2GHz |
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| Gain | 16dB |
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| Power - Max | 80mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 5mA, 2V |
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| Current - Collector (Ic) (Max) | 35mA |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-343F |
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| Supplier Device Package | M04 |
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