Technical Specifications of AT-41535G
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Broadcom Limited |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 12V |
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| Frequency - Transition | 8GHz |
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| Noise Figure (dB Typ @ f) | 1.3dB ~ 3dB @ 1GHz ~ 4GHz |
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| Gain | 10dB ~ 18dB |
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| Power - Max | 500mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 8V |
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| Current - Collector (Ic) (Max) | 60mA |
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| Mounting Type | Surface Mount |
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| Package / Case | 4-SMD (35 micro-X) |
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| Supplier Device Package | 35 micro-X |
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