Technical Specifications of 2SC3601E
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | SANYO Semiconductor (U.S.A) Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 150mA |
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| Voltage - Collector Emitter Breakdown (Max) | 200V |
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| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
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| Power - Max | 1.2W |
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| Frequency - Transition | 400MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-225AA, TO-126-3 |
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| Supplier Device Package | TO-126 |
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