Technical Specifications of MT3S15TU(TE85L)
| Datasheet |  MT3S15TU(TE85L) datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 6V |
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| Frequency - Transition | 11.5GHz |
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| Noise Figure (dB Typ @ f) | 1.6dB @ 1GHz |
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| Gain | 19dB |
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| Power - Max | 900mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
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| Current - Collector (Ic) (Max) | 80mA |
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| Mounting Type | Surface Mount |
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| Package / Case | 3-SMD, Flat Leads |
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| Supplier Device Package | UFM |
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