Technical Specifications of BFG25AW/X,115
Datasheet | BFG25AW/X,115 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - RF |
Manufacturer | NXP Semiconductors |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Frequency - Transition | 5GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 2dB @1GHz |
Gain | - |
Power - Max | 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500μA, 1V |
Current - Collector (Ic) (Max) | 6.5mA |
Mounting Type | Surface Mount |
Package / Case | SOT-343 Reverse Pinning |
Supplier Device Package | 4-SO |
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