Technical Specifications of SIZ900DT-T1-GE3
| Datasheet |  SIZ900DT-T1-GE3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Vishay Siliconix |
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| Series | TrenchFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | 2 N-Channel (Half Bridge) |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 24A, 28A |
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| Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 19.4A, 10V |
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| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 45nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 1830pF @ 15V |
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| Power - Max | 48W, 100W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-PowerPair? |
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| Supplier Device Package | 6-PowerPair? |
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