Technical Specifications of MRF5812R1
| Datasheet |  MRF5812R1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | * |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 15V |
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| Frequency - Transition | 5GHz |
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| Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 500MHz |
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| Gain | 13dB ~ 15.5dB |
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| Power - Max | 1.25W |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
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| Current - Collector (Ic) (Max) | 200mA |
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| Mounting Type | * |
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| Package / Case | * |
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| Supplier Device Package | * |
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