Technical Specifications of BFT92E6327
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | PNP |
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| Voltage - Collector Emitter Breakdown (Max) | 15V |
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| Frequency - Transition | 5GHz |
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| Noise Figure (dB Typ @ f) | 2dB ~ 3.2dB @ 900MHz ~ 1.8GHz |
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| Gain | 8dB ~ 13.5dB |
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| Power - Max | 200mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 15mA, 8V |
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| Current - Collector (Ic) (Max) | 25mA |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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| Supplier Device Package | PG-SOT23-3 |
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