Technical Specifications of CSD25213W10
| Datasheet |  CSD25213W10 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Texas Instruments |
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| Series | NexFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
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| Rds On (Max) @ Id, Vgs | 47 mOhm @ 1A, 4.5V |
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| Vgs(th) (Max) @ Id | 1.1V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 2.9nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 478pF @ 10V |
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| Power - Max | 1W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 4-UFBGA, DSBGA |
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| Supplier Device Package | 4-DSBGA (1x1) |
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